s mhop microelectronics c orp. a STT01L10 symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 100v 1.5a 350 @ vgs=4.5v 310 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. surface mount package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 1.0 www.samhop.com.tw aug,28,2013 1 details are subject to change without notice. w p d c -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =70 c a t a =70 c w a a 1.5 10 3 green product 1.2 1.9 g d s t a =25 c g s stt sris sot - 223 thermal characteristics 42 c/w thermal resistance, junction-to-ambient r ja a d
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 230 g fs s c iss 480 pf c oss 28 pf c rss 20 pf q g 9.3 nc 8.2 19.2 9.2 t d(on) 8 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =0.75a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =0.75a v ds =10v , i d =0.75a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =0.7a 310 260 350 m ohm c f=1.0mhz c STT01L10 ver 1.0 www.samhop.com.tw aug,28,2013 2 nc q gs nc q gd 1 1.8 gate-drain charge gate-source charge v ds =50v,i d =0.75a, v gs =10v drain-source diode characteristics and maximum ratings nc 4.2 v ds =50v,i d =0.75a,v gs =10v v ds =50v,i d =0.75a,v gs =4.5v v sd diode forward voltage v gs =0v,i s =0.9a 0.8 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.drain current limited by maximum junction temperature. _ _ _ 1 1.7 3 5.5
STT01L10 ver 1.0 www.samhop.com.tw aug,28,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 6.0 4.8 3.6 2.4 1.2 0 0 0.8 4.8 4.0 3.2 2.4 1.6 tj=125 c 25 c 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =0.75a v gs =4.5v i d =0.7a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 6.0 4.8 3.6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =3v v gs =10v v gs =2.5v v gs =4.5v 720 600 480 360 240 120 1 v gs =4.5v v gs =10v -55 c 0.1 1.2 2.4 3.6 4.8 6.0 2.4 1.2
STT01L10 ver 1.0 www.samhop.com.tw aug,28,2013 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 10 1 0.01 0.1 d c 10s 1s 10 0 ms 10ms 900 750 600 450 300 150 0 10 0 125 c 25 c i d =0.75a 75 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 75 c ciss coss crss 600 500 400 300 200 100 0 10 15 20 25 30 0 5 10 8 6 4 2 0 110 100 1 10 100 vds=50v,id=0.75a vgs=10v td(on) tr td(off ) tf 2 468 125 c 0 3 8 r d s (on) li m i t v ds =50v i d =0.75a 12 4567 v gs =10v single pulse t a =25 c
STT01L10 www.samhop.com.tw aug,28,2013 5 ver 1.0 figure 13. normalized thermal transient impedance curve square wave pulse duration(sec) normalized transient thermal resistance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 100 1000 p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a = p dm * r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 10 0.01 0.02 0.05 0.1 0.2 0.5 single pulse
ver 1.0 www.samhop.com.tw aug,28,2013 sot-223 e b g e e1 b 1 2 3 a b c c d b e1 0.10 m c b 0.10 m c b 0.10 m c b 0.080 c detail "a" c a2 a a1 detail "a" gauge plane seating plane c 0.25 l 1.50 1.60 0.76 2.84 6.70 4.60 0.81 6.30 bsc b1 b2 0.23 0.30 b 3.30 3.50 a1 2.30 a mom. min. 0.02 0.66 0.60 0.71 b3 2.90 3.00 g 2.95 7.00 0 min. min. dimensions millimeter 1.80 0.10 0.0008 1.70 0.0591 0.84 0.0260 0.79 0.0236 3.10 0.1142 3.05 0.1118 0.06 0.35 0.0090 bsc 7.30 0.2638 3.70 0.1300 0.0906 0.1811 0.0319 10 0 symbol c1 d c e1 l e1 e e 0.23 0.28 0.33 0.0090 a2 max. mom. dimensions inche 0.0709 0.0039 0.0630 0.0669 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 STT01L10
STT01L10 www.samhop.com.tw aug,28,2013 7 sot-223 tape and reel data sot-223 carrier tape sot-223 reel unit: @ package a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t unit: @ reel size ? 330 m n w w1 h k s g r v 2 0.5 10.6 2.0 2 0.5 ? 97.0 2 1.0 2.2 13.0 + 1.5 ? 13.0 + 0.5 - 0.2 8.0 2 0.1 6.83 2 0.1 1.88 2 0.1 7.42 2 0.1 1.50 + 0.25 1.60 + 0.1 12.0 + 0.3 - 0.1 1.75 2 0.1 5.50 2 0.5 4.00 2 0.1 2.00 2 0.05 p0 d0 d1 e e2 e1 p2 p1 k0 b0 a0 t 0.292 2 0.02 ver 1.0
www.samhop.com.tw top marking definition sot-223 xx product no. samhop logo production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) 01l10 STT01L10 aug,28,2013 8 ver 1.0
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